BSP135H6906XTSA1 vs BSD214SNH6327XTSA1 比較

詳細並排比較 BSP135H6906XTSA1 由 Infineon 與 BSD214SNH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 ✓ 啟用中
Infineon
BSD214SNH6327XTSA1 BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363

BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363

BSD214SNH6327XTSA1 ✓ 啟用中

規格比較

參數 BSP135H6906XTSA1 BSD214SNH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel Depletion Mode N-Channel
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at TA=25C 120 mA —
RDS(on) Max at VGS=0V 45 Ohm —
Power Dissipation (PD) Max 1.8 W —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(off)) Depletion mode (normally-on) —
工作溫度範圍 -55C to +150C -55C to +150C (junction)
封裝 PG-SOT223-4 (SOT-223, 3+tab) SOT-363 (PG-SOT363-PO), 6-pin
安裝類型 Surface Mount Surface Mount
腳位數 4 (3 leads + drain tab) —
Technology SIPMOS (planar high-voltage) MOSFET (Metal Oxide), OptiMOS
MSL 等級 1 (unlimited) 1
RoHS 狀態 Compliant Compliant
Automotive Qualification AEC-Q101 (per datasheets.com parametric record) AEC-Q101 qualified
Lead-Free Yes —
Drain-to-Source Voltage (Vdss) — 20 V
Continuous Drain Current (Id) at 25C — 1.5 A
Power Dissipation (Pd) at Ta — 500 mW
Gate Drive Voltage (Rds On rated) — 2.5 V, 4.5 V
Rds On (Max) @ Vgs=4.5V — [DATA_NEEDED: Rds On at Vgs=4.5V]
Rds On (Max) @ Vgs=2.5V — [DATA_NEEDED: Rds On at Vgs=2.5V]
Vgs(th) (typical) — [DATA_NEEDED: Vgs threshold typical]
Lead Plating — Pb-free
Standard Pack Quantity — 3000 (Tape & Reel)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價