BSP149H6327XTSA1 vs BSS214NH6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP149H6327XTSA1 disebabkan oleh Infineon dan BSS214NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSP149H6327XTSA1 | BSS214NH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | N-Channel | — |
| Mode of Operation | Depletion Mode (normally ON) | — |
| Drain-Source Voltage VDS | 200 V | — |
| Continuous Drain Current ID | 660 mA (Ta) | — |
| Power Dissipation PD | 1.8 W (Ta) | — |
| On-State Resistance RDS(on) | 1 ohm (typ) | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: max VGS rating] | — |
| Kemasan | PG-SOT223-4 (SOT-223-4) | SOT-23 (PG-SOT23), 3 pins |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55 C to +150 C (Tj) | — |
| Technology | SIPMOS | OptiMOS 2 (planar N-channel) |
| Channel Count | 1 | — |
| Kiraan Pin | 4 (G, D, S, tab) | — |
| Status RoHS | Compliant | Compliant |
| Configuration | Single | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 20 V |
| Continuous Drain Current (ID) | — | 1.5 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| Drain-Source On-Resistance (RDS(on) max) | — | 250 mOhm at VGS = 4.5 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-Source Voltage (VGS max) | — | ±12 V (recommended) |
| Gambaran Suhu Operasi | — | -55C to +150C (junction) |
| Qualification | — | AEC-Q101 (Automotive) |
| Lead Finish | — | Pb-free lead plating (matte tin) |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| ESD Protection | — | Yes (gate ESD diode) |