BSS205NH6327XTSA1 vs BSR802NL6327HTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS205NH6327XTSA1 disebabkan oleh Infineon dan BSR802NL6327HTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS205NH6327XTSA1 BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS205NH6327XTSA1 BSR802NL6327HTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSS205NH6327XTSA1 BSR802NL6327HTSA1
Jenis Transistor N-Channel MOSFET —
Kemasan PG-SOT23 (SC-59, TO-236-3), 3-pin PG-SC59-3 (SC-59 / SOT-346)
Jenis Pemasangan Surface Mount Surface Mount
Drain-Source Voltage V<sub>DS</sub> 20 V —
Continuous Drain Current I<sub>D</sub> (Ta) 2.5 A —
Power Dissipation P<sub>D</sub> (Ta) 500 mW —
R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) 85 mΩ —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: Vgs(th) typical value] —
Gambaran Suhu Operasi -55 °C to +150 °C (junction) —
Gate Drive Voltage Logic-level compatible —
Qualification AEC-Q101 Automotive
Lead Plating Pb-free —
RoHS Compliance Compliant —
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Packaging Tape & Reel (H6327) —
Technology — OptiMOS 2 (N-Channel Trench MOSFET)
Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 20 V
Continuous Drain Current (ID) max — 3.7 A (Ta=25C)
Power Dissipation (PD) max — 500 mW (Ta=25C)
On-Resistance (RDS(on)) typ — 23 mOhm @ VGS=4.5 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Suhu Hubungan Operasi — -55C to +150C
Status RoHS — Compliant
Kiraan Pin — 3

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