BSS316NH6327XTSA1 vs BSS306NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS316NH6327XTSA1 disebabkan oleh Infineon dan BSS306NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS316NH6327XTSA1 BSS306NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode N-Channel
Technology OptiMOS 2 (Trench) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 1.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Drain-Source On-Resistance RDS(on) max 160 mOhm at VGS=10V, ID=1.4A —
Gate-Source Threshold Voltage VGS(th) typ 2 V at ID=3.7 uA —
Total Gate Charge (Qg) 600 pC at VGS=5 V —
Input Capacitance (Ciss) 94 pF at VDS=15 V —
Output Capacitance (Coss) [DATA_NEEDED: output capacitance] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: reverse transfer capacitance] —
Maximum Power Dissipation (PD) at TA=25C 500 mW —
Gambaran Suhu Hubungan Operasi -55 C to +150 C —
Kemasan PG-SOT23 (SOT-23-3) SOT-23 (PG-SOT23), 3-pin
Jenis Pemasangan Surface Mount Surface Mount
Lead Plating Pb-free (Matte Tin) Pb-free (RoHS compliant)
Aras MSL MSL1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Automotive Qualification AEC-Q101 qualified —
Manufacturer — Infineon Technologies
Part Number — BSS306NH6327XTSA1
Part Family — BSS306N (OptiMOS Small Signal)
Continuous Drain Current (ID) — 2.3 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) max — [DATA_NEEDED: exact RDS(on) max value in mΩ]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max in V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) in V]
Suhu Operasi — -55°C to +150°C (TJ)
Qualification — AEC-Q101 (Automotive)
Configuration — Single N-Channel, 3-pin

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