BSS316NH6327XTSA1 vs BSS306NH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSS316NH6327XTSA1 sa pamamagitan ng Infineon at BSS306NH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon
BSS316NH6327XTSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSS316NH6327XTSA1 | BSS306NH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Technology | OptiMOS 2 (Trench) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance RDS(on) max | 160 mOhm at VGS=10V, ID=1.4A | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V at ID=3.7 uA | — |
| Total Gate Charge (Qg) | 600 pC at VGS=5 V | — |
| Input Capacitance (Ciss) | 94 pF at VDS=15 V | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: reverse transfer capacitance] | — |
| Maximum Power Dissipation (PD) at TA=25C | 500 mW | — |
| Hanay ng Temperature ng Junction na Operasyon | -55 C to +150 C | — |
| Packhaging | PG-SOT23 (SOT-23-3) | SOT-23 (PG-SOT23), 3-pin |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Lead Plating | Pb-free (Matte Tin) | Pb-free (RoHS compliant) |
| Level ng MSL | MSL1 (per JEDEC J-STD-020) | — |
| Tindminan RoHS | Compliant | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS306NH6327XTSA1 |
| Part Family | — | BSS306N (OptiMOS Small Signal) |
| Continuous Drain Current (ID) | — | 2.3 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| RDS(on) max | — | [DATA_NEEDED: exact RDS(on) max value in mΩ] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max in V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) in V] |
| Temperature na Operasyon | — | -55°C to +150°C (TJ) |
| Qualification | — | AEC-Q101 (Automotive) |
| Configuration | — | Single N-Channel, 3-pin |