BSS84-7-F-W vs BSS84PH6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS84-7-F-W disebabkan oleh Diodes Incorporated dan BSS84PH6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Diodes Incorporated
BSS84-7-F-W BSS84-7-F-W - P-Ch 50V 130mA SOT-23 MOSFET | Diodes Inc

BSS84-7-F-W - P-Ch 50V 130mA SOT-23 MOSFET | Diodes Inc

BSS84-7-F-W ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS84-7-F-W BSS84PH6327XTSA2
Merek Diodes Incorporated Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity P-Channel —
Channel Type Enhancement Mode —
Drain-Source Voltage (Vdss) 50 V —
Continuous Drain Current (Id) 130 mA (Ta) —
Power Dissipation (Pd) 300 mW (Ta) —
On-State Resistance RDS(on) 10 Ohm (max, per Future Electronics listing) —
Gate-Source Voltage (Vgs) [DATA_NEEDED: Vgs max rating] —
Gate Threshold Voltage (Vgs th) [DATA_NEEDED: Vgs threshold] —
Number of Channels 1 —
Kemasan SOT-23-3 PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Terminal Finish Matte Tin plated, solderable per MIL-STD-202 —
Suhu Operasi [DATA_NEEDED: operating temperature range] -55C to +150C
Packaging Tape & Reel (3K per reel, -W suffix) —
Status RoHS Compliant Compliant
Technology Si (silicon DMOS) —
Manufacturer — Infineon Technologies
Part Number — BSS84PH6327XTSA2
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -170 mA (Ta)
Power Dissipation (PD) — 360 mW (Ta)
On-State Resistance (RDS(on)) max — 8 ohm at VGS = -10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-to-Source Voltage (VGS) — +/-20 V
Qualification — AEC-Q101 (Automotive)
Technology Family — SIPMOS OptiMOS
Polarity — P-Channel Enhancement Mode
Lead-Free — Yes

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