BSZ018NE2LSATMA1 vs BSZ036NE2LSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ018NE2LSATMA1 disebabkan oleh Infineon dan BSZ036NE2LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSZ018NE2LSATMA1 | BSZ036NE2LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | OptiMOS 25V |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (TA) | 23 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 69 W | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) typical at VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Gambaran Suhu Operasi | -55C to +150C | -55C to +150C |
| Kemasan | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TSDSON-8-FL (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (Unlimited) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | — |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 16 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 37 W |
| Configuration | — | Single |
| Gate Drive | — | Logic-level compatible |