BSZ018NE2LSATMA1 vs BSZ036NE2LSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ018NE2LSATMA1 sa pamamagitan ng Infineon at BSZ036NE2LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSZ018NE2LSATMA1 BSZ018NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 23A/40A | Infineon

BSZ018NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 23A/40A | Infineon

BSZ018NE2LSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSZ018NE2LSATMA1 BSZ036NE2LSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 25V OptiMOS 25V
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (TA) 23 A —
Continuous Drain Current (TC) 40 A —
Power Dissipation (TA) 2.1 W —
Power Dissipation (TC) 69 W —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) typical at VGS=10V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Gate Charge Qg [DATA_NEEDED: total gate charge at VGS=10V] —
Hanay ng Temperature na Operasyon -55C to +150C -55C to +150C
Packhaging PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) PG-TSDSON-8-FL (5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL [DATA_NEEDED: MSL rating] 1 (Unlimited)
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Wala sa Halogen Yes —
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 16 A
Continuous Drain Current (ID) at TC=25C — 40 A
Power Dissipation (PD) at TA=25C — 2.1 W
Power Dissipation (PD) at TC=25C — 37 W
Configuration — Single
Gate Drive — Logic-level compatible

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