BSZ031NE2LS5ATMA1 vs BSC0501NSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ031NE2LS5ATMA1 disebabkan oleh Infineon dan BSC0501NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ031NE2LS5ATMA1 BSC0501NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon
Part Number BSZ031NE2LS5ATMA1 —
Technology / Platform OptiMOS 5 25V/30V N-channel trench MOSFET —
Drain-Source Voltage (VDS) max 25 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Continuous Drain Current (ID) at Ta=25C 19 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: IDM]
RDS(on) max @ VGS=10 V 3.1 mOhm —
RDS(on) typical @ VGS=4.5 V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Power Dissipation at Ta=25C 2.1 W —
Power Dissipation at Tc=25C 30 W —
Suhu Hubungan Operasi -55 C to +150 C -55C to +150C
Kemasan PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) PG-TDSON-8-6 (SuperSO8)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL] 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Lead-Free Yes —
Boson Bebas Yes —
Product Family — OptiMOS 5 25V/30V
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 29 A
Continuous Drain Current (ID) at Tc — 100 A
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 50 W
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Avalanche Rated — Yes
Technology — Trench-gate OptiMOS 5

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