BSZ031NE2LS5ATMA1 vs BSC0501NSIATMA1 Comparison
Detailed side-by-side comparison of BSZ031NE2LS5ATMA1 by Infineon and BSC0501NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
BSZ031NE2LS5ATMA1 β ActiveInfineon
BSC0501NSIATMA1
BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon
BSC0501NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSZ031NE2LS5ATMA1 | BSC0501NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.26 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon |
| Part Number | BSZ031NE2LS5ATMA1 | β |
| Technology / Platform | OptiMOS 5 25V/30V N-channel trench MOSFET | β |
| Drain-Source Voltage (VDS) max | 25 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Continuous Drain Current (ID) at Ta=25C | 19 A | β |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10 V | 3.1 mOhm | β |
| RDS(on) typical @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Power Dissipation at Ta=25C | 2.1 W | β |
| Power Dissipation at Tc=25C | 30 W | β |
| Operating Junction Temperature | -55 C to +150 C | -55C to +150C |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-6 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL] | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Product Family | β | OptiMOS 5 25V/30V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 29 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 50 W |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at 10V VGS] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Avalanche Rated | β | Yes |
| Technology | β | Trench-gate OptiMOS 5 |