BSZ031NE2LS5ATMA1 vs BSC0501NSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ031NE2LS5ATMA1 sa pamamagitan ng Infineon at BSC0501NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
BSZ031NE2LS5ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSZ031NE2LS5ATMA1 | BSC0501NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon |
| Part Number | BSZ031NE2LS5ATMA1 | — |
| Technology / Platform | OptiMOS 5 25V/30V N-channel trench MOSFET | — |
| Drain-Source Voltage (VDS) max | 25 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta=25C | 19 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10 V | 3.1 mOhm | — |
| RDS(on) typical @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Power Dissipation at Ta=25C | 2.1 W | — |
| Power Dissipation at Tc=25C | 30 W | — |
| Temperature ng Junction na Operasyon | -55 C to +150 C | -55C to +150C |
| Packhaging | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-6 (SuperSO8) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL] | 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Product Family | — | OptiMOS 5 25V/30V |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 50 W |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at 10V VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Avalanche Rated | — | Yes |
| Technology | — | Trench-gate OptiMOS 5 |