DMN3190LDW-7 vs JMTG100N06A Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci DMN3190LDW-7 disebabkan oleh Diodes Incorporated dan JMTG100N06A disebabkan oleh Jiejie Micro. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | DMN3190LDW-7 | JMTG100N06A |
|---|---|---|
| Merek | Diodes Incorporated | Jiejie Micro |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | Dual N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Gate-Source Voltage (VGS) | 20 V | — |
| Continuous Drain Current (ID) | 1 A | — |
| Power Dissipation (PD) | 320 mW | — |
| Kemasan | SOT-363 (SC-70-6) 6-pin | PDFN5x6-8L (Power DFN 5×6 mm, 8 leads) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55C to +150C | — |
| Configuration | Dual, independent drains | — |
| Technology | Silicon N-Channel MOSFET | — |
| Channel Mode | Enhancement | — |
| Aras MSL | 1 (unlimited) | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Factory Pack Quantity | 3000 | — |
| Manufacturer | — | Jiangsu JieJie Microelectronics Co., Ltd |
| Jenis Transistor | — | N-Channel Power Trench MOSFET |
| Drain-Source Voltage V(DSS) | — | 60 V |
| Continuous Drain Current I(D) | — | 55 A (at V(GS)=10 V, T(C)=25 °C) |
| R(DS(on)) Typ @ V(GS)=10 V | — | 7.7 mΩ |
| R(DS(on)) Typ @ V(GS)=4.5 V | — | 8.9 mΩ |
| Gate Threshold Voltage V(GS(th)) Typ | — | 1.5 V |
| Plating | — | Pb-free |
| Boson Bebas | — | Yes |
| RoHS | — | Compliant |
| UIS (Avalanche) Tested | — | 100 % |
| V(DS) Tested | — | 100 % |
| EAS Test Condition | — | T(J)=25 °C, V(DD)=30 V, V(G)=10 V, L=0.5 mH, R(g)=25 Ω, I(AS)=22 A |
| Primary Applications | — | Load Switch, PWM, DC-DC, Motor Drive |