DMN3190LDW-7 vs JMTG100N06A 比較
詳細並排比較 DMN3190LDW-7 由 Diodes Incorporated 與 JMTG100N06A 由 Jiejie Micro. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ 啟用中
規格比較
| 參數 | DMN3190LDW-7 | JMTG100N06A |
|---|---|---|
| 品牌 | Diodes Incorporated | Jiejie Micro |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | Dual N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Gate-Source Voltage (VGS) | 20 V | — |
| Continuous Drain Current (ID) | 1 A | — |
| Power Dissipation (PD) | 320 mW | — |
| 封裝 | SOT-363 (SC-70-6) 6-pin | PDFN5x6-8L (Power DFN 5×6 mm, 8 leads) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +150C | — |
| Configuration | Dual, independent drains | — |
| Technology | Silicon N-Channel MOSFET | — |
| Channel Mode | Enhancement | — |
| MSL 等級 | 1 (unlimited) | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| Factory Pack Quantity | 3000 | — |
| Manufacturer | — | Jiangsu JieJie Microelectronics Co., Ltd |
| 電晶體類型 | — | N-Channel Power Trench MOSFET |
| Drain-Source Voltage V(DSS) | — | 60 V |
| Continuous Drain Current I(D) | — | 55 A (at V(GS)=10 V, T(C)=25 °C) |
| R(DS(on)) Typ @ V(GS)=10 V | — | 7.7 mΩ |
| R(DS(on)) Typ @ V(GS)=4.5 V | — | 8.9 mΩ |
| Gate Threshold Voltage V(GS(th)) Typ | — | 1.5 V |
| Plating | — | Pb-free |
| 無鹵素 | — | Yes |
| RoHS | — | Compliant |
| UIS (Avalanche) Tested | — | 100 % |
| V(DS) Tested | — | 100 % |
| EAS Test Condition | — | T(J)=25 °C, V(DD)=30 V, V(G)=10 V, L=0.5 mH, R(g)=25 Ω, I(AS)=22 A |
| Primary Applications | — | Load Switch, PWM, DC-DC, Motor Drive |