EP1C12F256C8 vs EP1C12F256C6N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP1C12F256C8 disebabkan oleh Intel dan EP1C12F256C6N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Intel
EP1C12F256C6N - 12,060 LEs Cyclone FPGA 256-BGA | Intel / Altera
EP1C12F256C6N ⚠ Bahagian terakhir untuk beliPengandingan Spesifikasi
| Parametr | EP1C12F256C8 | EP1C12F256C6N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Masa Terakhir Dibeli |
| Series | Cyclone | — |
| Family | Cyclone I | Cyclone® |
| Logic Elements (LE) | 12,060 | — |
| Total RAM Bits | 239,616 | — |
| Number of LABs/CLBs | 1,206 | — |
| Number of Logic Elements/Cells | 12,060 | — |
| Number of I/O | 185 | — |
| Number of PLLs | 2 | — |
| Total Memory Bits | 239,616 | — |
| Kemasan / Case | 256-BGA (FBGA) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount (BGA) |
| Suhu Operasi | 0°C to +85°C (commercial grade) | 0 °C to +85 °C (commercial) |
| Core Voltage | 1.5 V | — |
| I/O Voltage Range | 1.5 V to 3.3 V | — |
| Supplier Device Package | 256-FBGA (17x17 mm) | — |
| Process Technology | 130 nm SRAM | 0.13 µm SRAM |
| Configuration Method | Passive Serial / Active Serial / JTAG | Serial (EPCS) / JTAG |
| Logic Elements (LEs) | — | 12,060 |
| Logic Array Blocks (LABs) | — | 1,206 |
| Embedded Memory Bits | — | 239,616 bits |
| M4K RAM Blocks | — | 52 |
| Embedded 18x18 Multipliers | — | Yes |
| PLLs | — | 2 |
| Maximum User I/O | — | 185 |
| User I/O Banks | — | [DATA_NEEDED: number of user I/O banks] |
| Core Voltage (VCCINT) | — | 1.5 V |
| I/O Voltage (VCCIO) | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) |
| Kemasan | — | 256-ball FBGA (F256) |
| Speed Grade | — | 6 |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |