EP1C12F256C8 vs EP1C12F256C6N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1C12F256C8 sa pamamagitan ng Intel at EP1C12F256C6N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Intel
EP1C12F256C6N - 12,060 LEs Cyclone FPGA 256-BGA | Intel / Altera
EP1C12F256C6N ⚠ Huling PagbiliPagsanggunian na paghahambing
| Parametro | EP1C12F256C8 | EP1C12F256C6N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Huling Pagbili |
| Series | Cyclone | — |
| Family | Cyclone I | Cyclone® |
| Logic Elements (LE) | 12,060 | — |
| Total RAM Bits | 239,616 | — |
| Number of LABs/CLBs | 1,206 | — |
| Number of Logic Elements/Cells | 12,060 | — |
| Number of I/O | 185 | — |
| Number of PLLs | 2 | — |
| Total Memory Bits | 239,616 | — |
| Packhaging / Kaso | 256-BGA (FBGA) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Temperature na Operasyon | 0°C to +85°C (commercial grade) | 0 °C to +85 °C (commercial) |
| Core Voltage | 1.5 V | — |
| I/O Voltage Range | 1.5 V to 3.3 V | — |
| Supplier Device Package | 256-FBGA (17x17 mm) | — |
| Process Technology | 130 nm SRAM | 0.13 µm SRAM |
| Configuration Method | Passive Serial / Active Serial / JTAG | Serial (EPCS) / JTAG |
| Logic Elements (LEs) | — | 12,060 |
| Logic Array Blocks (LABs) | — | 1,206 |
| Embedded Memory Bits | — | 239,616 bits |
| M4K RAM Blocks | — | 52 |
| Embedded 18x18 Multipliers | — | Yes |
| PLLs | — | 2 |
| Maximum User I/O | — | 185 |
| User I/O Banks | — | [DATA_NEEDED: number of user I/O banks] |
| Core Voltage (VCCINT) | — | 1.5 V |
| I/O Voltage (VCCIO) | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) |
| Packhaging | — | 256-ball FBGA (F256) |
| Speed Grade | — | 6 |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS status] |