EP3C10F256C8N vs EP3C10F256C6 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3C10F256C8N disebabkan oleh Altera dan EP3C10F256C6 disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr EP3C10F256C8N EP3C10F256C6
Merek Altera Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Series Cyclone III —
Logic Elements 10,320 —
Logic Array Blocks (LABs) 645 —
Embedded Memory (Bits) 423,936 —
User I/Os 182 —
Operating Frequency (max) 402 MHz —
Core Supply Voltage (VCCINT) 1.15 V to 1.25 V (1.2 V nominal) —
Process Technology 60 nm low-power CMOS 60 nm low-power CMOS
Embedded 18x18 Multipliers 23 23
PLLs 4 2
Kemasan 256-pin FineLine BGA (FBGA-256, 17 x 17 x 1.8 mm) 256-FBGA (FineLine BGA, 17x17 mm, 1.0 mm pitch)
Jenis Pemasangan Surface Mount Surface Mount (BGA)
Suhu Operasi 0 C to 85 C (Commercial, 'C' grade) -40 C to +125 C (industrial, suffix 'C')
Status RoHS Compliant Compliant (lead-free FBGA)
Lead-Free Yes —
Aras MSL MSL3 (per JEDEC J-STD-020, typical for FineLine BGA) 3 (168 hours)
Configuration Method SRAM-based, supports Active Serial (AS), Passive Serial (PS), JTAG —
Equivalent Gate Count ~0.5 M Gates (approximate) —
Family — Cyclone III
Logic Elements (LE) — 10,320
Total Memory Bits — 423,936 bits
Maximum User I/Os — 182
Core Voltage (VCCINT) — 1.15 V to 1.25 V (typ. 1.2 V)
I/O Voltage (VCCIO) — 1.2 V to 3.3 V (bank-dependent)
Configuration Memory — SRAM-based (external EPCS flash required)
Speed Grade — 6

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