EP3C10F256C8N vs EP3C10F256C6 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP3C10F256C8N sa pamamagitan ng Altera at EP3C10F256C6 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP3C10F256C8N EP3C10F256C6
Brand Altera Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Series Cyclone III —
Logic Elements 10,320 —
Logic Array Blocks (LABs) 645 —
Embedded Memory (Bits) 423,936 —
User I/Os 182 —
Operating Frequency (max) 402 MHz —
Core Supply Voltage (VCCINT) 1.15 V to 1.25 V (1.2 V nominal) —
Process Technology 60 nm low-power CMOS 60 nm low-power CMOS
Embedded 18x18 Multipliers 23 23
PLLs 4 2
Packhaging 256-pin FineLine BGA (FBGA-256, 17 x 17 x 1.8 mm) 256-FBGA (FineLine BGA, 17x17 mm, 1.0 mm pitch)
Uri ng Pagpapasok Surface Mount Surface Mount (BGA)
Temperature na Operasyon 0 C to 85 C (Commercial, 'C' grade) -40 C to +125 C (industrial, suffix 'C')
Tindminan RoHS Compliant Compliant (lead-free FBGA)
Lead-Free Yes —
Level ng MSL MSL3 (per JEDEC J-STD-020, typical for FineLine BGA) 3 (168 hours)
Configuration Method SRAM-based, supports Active Serial (AS), Passive Serial (PS), JTAG —
Equivalent Gate Count ~0.5 M Gates (approximate) —
Family — Cyclone III
Logic Elements (LE) — 10,320
Total Memory Bits — 423,936 bits
Maximum User I/Os — 182
Core Voltage (VCCINT) — 1.15 V to 1.25 V (typ. 1.2 V)
I/O Voltage (VCCIO) — 1.2 V to 3.3 V (bank-dependent)
Configuration Memory — SRAM-based (external EPCS flash required)
Speed Grade — 6

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita