EP4CE40U19A7N vs EP4CE40F23C8N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP4CE40U19A7N disebabkan oleh Intel dan EP4CE40F23C8N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP4CE40U19A7N | EP4CE40F23C8N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Series | Cyclone IV E | — |
| Family | EP4CE40 | Cyclone IV E |
| Logic Elements (LE) | 39,600 | — |
| Embedded Memory (bits) | 1,161,216 (113 Kbytes) | — |
| Embedded Multipliers (18x18) | 116 | — |
| M9K Memory Blocks | 66 | — |
| Maximum User I/O | 328 | 328 |
| PLLs | 4 | 4 |
| Global Clock Networks | 20 | — |
| Kemasan | 484-ball FBGA (U19) | 484-ball FBGA (FineLine BGA), 1.0 mm pitch |
| Grade | Automotive (A7 = -40C to 125C TJ) | — |
| Process Technology | 60 nm low-power CMOS | 60 nm low-power |
| Suhu Hubungan Operasi | -40C to +125C | — |
| Storage Temperature | -65C to +150C | — |
| Configuration Modes | JTAG, Active Serial (AS), Passive Serial (PS), Fast Passive Parallel (FPP) | JTAG, Active Serial (AS), Passive Serial (PS) |
| External Memory Support | DDR/DDR2 SDRAM, QDRII SRAM | — |
| I/O Standards | LVDS, SSTL, HSTL, PCI, LVTTL, LVCMOS | — |
| Status RoHS | Compliant | Compliant |
| Logic Elements | — | 39,600 |
| Logic Array Blocks (LABs) | — | 2,475 |
| Embedded Memory | — | 1,134 Kbit (M9K blocks) |
| Embedded 18x18 Multipliers | — | 66 |
| User I/O Banks | — | 8 |
| Core Voltage | — | 1.2 V |
| Maximum Operating Frequency | — | 200 MHz |
| Jenis Pemasangan | — | Surface Mount (BGA) |
| Suhu Operasi | — | 0C to +85C (commercial) |
| Lead-Free | — | Yes |