EP4CE40U19A7N vs EP4CE40F23C8N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE40U19A7N sa pamamagitan ng Intel at EP4CE40F23C8N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE40U19A7N | EP4CE40F23C8N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone IV E | — |
| Family | EP4CE40 | Cyclone IV E |
| Logic Elements (LE) | 39,600 | — |
| Embedded Memory (bits) | 1,161,216 (113 Kbytes) | — |
| Embedded Multipliers (18x18) | 116 | — |
| M9K Memory Blocks | 66 | — |
| Maximum User I/O | 328 | 328 |
| PLLs | 4 | 4 |
| Global Clock Networks | 20 | — |
| Packhaging | 484-ball FBGA (U19) | 484-ball FBGA (FineLine BGA), 1.0 mm pitch |
| Grade | Automotive (A7 = -40C to 125C TJ) | — |
| Process Technology | 60 nm low-power CMOS | 60 nm low-power |
| Temperature ng Junction na Operasyon | -40C to +125C | — |
| Storage Temperature | -65C to +150C | — |
| Configuration Modes | JTAG, Active Serial (AS), Passive Serial (PS), Fast Passive Parallel (FPP) | JTAG, Active Serial (AS), Passive Serial (PS) |
| External Memory Support | DDR/DDR2 SDRAM, QDRII SRAM | — |
| I/O Standards | LVDS, SSTL, HSTL, PCI, LVTTL, LVCMOS | — |
| Tindminan RoHS | Compliant | Compliant |
| Logic Elements | — | 39,600 |
| Logic Array Blocks (LABs) | — | 2,475 |
| Embedded Memory | — | 1,134 Kbit (M9K blocks) |
| Embedded 18x18 Multipliers | — | 66 |
| User I/O Banks | — | 8 |
| Core Voltage | — | 1.2 V |
| Maximum Operating Frequency | — | 200 MHz |
| Uri ng Pagpapasok | — | Surface Mount (BGA) |
| Temperature na Operasyon | — | 0C to +85C (commercial) |
| Lead-Free | — | Yes |