H5AN4G8NBJR-PBC vs H5AN4G8NBJR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-PBC disebabkan oleh SK hynix dan H5AN4G8NBJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-PBC | H5AN4G8NBJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Memory Density | 4 Gbit | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Jenis Antaramuka | Parallel, JEDEC DDR4 | — |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Speed Grade | PBC | — |
| Clock Frequency | [DATA_NEEDED: Clock Frequency] | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | — |
| Kemasan | 78-ball FBGA | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Normal Operating Case Temperature | 0C to 85C | — |
| Extended Temperature Range | up to 95C case (with increased refresh) | — |
| Lead Free | Yes | — |
| Boson Bebas | Yes | — |
| Refresh | 8n prefetch, standard/auto refresh per DDR4 JEDEC | Auto-refresh and self-refresh |
| Density | — | 4 Gbit |
| Antaramuka | — | DDR4 (Double Data Rate IV) |
| Tegangan Pemberi Arus | — | [DATA_NEEDED: VDD supply voltage] |
| Kadar Data | — | [DATA_NEEDED: speed grade Mbps] |
| Bank Architecture | — | 8 banks with 4 bank groups (x8) |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Termination | — | On-Die Termination (ODT) |
| Status RoHS | — | Lead-Free & Halogen-Free (RoHS Compliant) |
| Process Technology | — | CMOS |
| Manufacturer | — | SK hynix |
| Family Series | — | H5AN4G4/8/6NBJR |