H5AN4G8NBJR-PBC vs H5AN4G8NBJR-VKC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-PBC disebabkan oleh SK hynix dan H5AN4G8NBJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-PBC | H5AN4G8NBJR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Memory Density | 4 Gbit | — |
| Organisasi | 512M x 8 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Jenis Antaramuka | Parallel, JEDEC DDR4 | — |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Speed Grade | PBC | — |
| Clock Frequency | [DATA_NEEDED: Clock Frequency] | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | — |
| Kemasan | 78-ball FBGA | FBGA-78 (7.5 x 11 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Normal Operating Case Temperature | 0C to 85C | — |
| Extended Temperature Range | up to 95C case (with increased refresh) | — |
| Lead Free | Yes | — |
| Boson Bebas | Yes | — |
| Refresh | 8n prefetch, standard/auto refresh per DDR4 JEDEC | [DATA_NEEDED: refresh rate] |
| Saiz Ingatan | — | 4 Gb |
| Memory Organization | — | 512M x8 |
| Kadar Data | — | 2666 Mbps (DDR4-2666) |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS DRAM |
| Volatile / Non-Volatile | — | Volatile |
| Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Latensi CAS | — | [DATA_NEEDED: CAS latency for 2666 grade] |
| Status RoHS | — | Compliant (Lead-Free & Halogen-Free per datasheet) |
| Packaging | — | Tray |
| Status Lingkungan Hidup | — | Active |