H5AN4G8NBJR-UHCR vs H5AN4G8NBJR-PBC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-UHCR disebabkan oleh SK hynix dan H5AN4G8NBJR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5AN4G8NBJR-UHCR H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR ✓ Aktif

Pengandingan Spesifikasi

Parametr H5AN4G8NBJR-UHCR H5AN4G8NBJR-PBC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit —
Organisasi 512M x 8 512M x 8
Speed Grade UH (DDR4-2400 class, PC2400) PBC
Tegangan Pemberi Arus 1.2 V (VDD) —
Antaramuka DDR4 SSTL12 —
Internal Prefetch 8n —
Kemasan 78-ball FBGA (11 mm x 7.5 mm) 78-ball FBGA
Jenis Pemasangan Surface Mount (BGA solder-down) Surface Mount
Operating Case Temperature -40C to +85C (industrial range) —
Extended Temperature Range Up to +95C case temperature (per datasheet conditions) up to 95C case (with increased refresh)
Lead Free Yes Yes
Boson Bebas Yes Yes
Status RoHS Compliant —
Packaging Suffix -R = Tape and Reel —
Refresh [DATA_NEEDED: refresh rate 1x/2x specification] 8n prefetch, standard/auto refresh per DDR4 JEDEC
Latensi CAS [DATA_NEEDED: CL value for UH grade] —
Memory Density — 4 Gbit
Jenis Antaramuka — Parallel, JEDEC DDR4
Supply Voltage VDD — 1.2 V
Supply Voltage VDDQ — 1.2 V
Clock Frequency — [DATA_NEEDED: Clock Frequency]
CAS Latency (CL) — [DATA_NEEDED: CAS Latency]
Normal Operating Case Temperature — 0C to 85C

Laporan Datasheet & Sumber

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