H5AN4G8NBJR-UHCR vs H5AN4G8NBJR-PBC 比較

詳細並排比較 H5AN4G8NBJR-UHCR 由 SK hynix 與 H5AN4G8NBJR-PBC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN4G8NBJR-UHCR H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR ✓ 啟用中
SK hynix
H5AN4G8NBJR-PBC H5AN4G8NBJR-PBC - 4Gb DDR4 SDRAM 512Mx8 FBGA-78 | SK hynix

H5AN4G8NBJR-PBC - 4Gb DDR4 SDRAM 512Mx8 FBGA-78 | SK hynix

H5AN4G8NBJR-PBC ✓ 啟用中

規格比較

參數 H5AN4G8NBJR-UHCR H5AN4G8NBJR-PBC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit —
組織 512M x 8 512M x 8
Speed Grade UH (DDR4-2400 class, PC2400) PBC
供應電壓 1.2 V (VDD) —
介面 DDR4 SSTL12 —
Internal Prefetch 8n —
封裝 78-ball FBGA (11 mm x 7.5 mm) 78-ball FBGA
安裝類型 Surface Mount (BGA solder-down) Surface Mount
Operating Case Temperature -40C to +85C (industrial range) —
Extended Temperature Range Up to +95C case temperature (per datasheet conditions) up to 95C case (with increased refresh)
Lead Free Yes Yes
無鹵素 Yes Yes
RoHS 狀態 Compliant —
Packaging Suffix -R = Tape and Reel —
Refresh [DATA_NEEDED: refresh rate 1x/2x specification] 8n prefetch, standard/auto refresh per DDR4 JEDEC
CAS 延遲 [DATA_NEEDED: CL value for UH grade] —
Memory Density — 4 Gbit
介面類型 — Parallel, JEDEC DDR4
Supply Voltage VDD — 1.2 V
Supply Voltage VDDQ — 1.2 V
Clock Frequency — [DATA_NEEDED: Clock Frequency]
CAS Latency (CL) — [DATA_NEEDED: CAS Latency]
Normal Operating Case Temperature — 0C to 85C

資料表與資源

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