H5AN4G8NBJR-UHCR vs H5AN4G8NBJR-VKI Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-UHCR disebabkan oleh SK hynix dan H5AN4G8NBJR-VKI disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-UHCR | H5AN4G8NBJR-VKI |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organisasi | 512M x 8 | 512M x 8 |
| Speed Grade | UH (DDR4-2400 class, PC2400) | V (2666) |
| Tegangan Pemberi Arus | 1.2 V (VDD) | 1.2 V |
| Antaramuka | DDR4 SSTL12 | — |
| Internal Prefetch | 8n | — |
| Kemasan | 78-ball FBGA (11 mm x 7.5 mm) | FBGA-78 |
| Jenis Pemasangan | Surface Mount (BGA solder-down) | Surface Mount |
| Operating Case Temperature | -40C to +85C (industrial range) | — |
| Extended Temperature Range | Up to +95C case temperature (per datasheet conditions) | — |
| Lead Free | Yes | — |
| Boson Bebas | Yes | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS Status] |
| Packaging Suffix | -R = Tape and Reel | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x specification] | [DATA_NEEDED: Refresh specification] |
| Latensi CAS | [DATA_NEEDED: CL value for UH grade] | [DATA_NEEDED: CAS Latency] |
| Kadar Data | — | 2666 Mbps |
| I/O Voltage | — | 1.2 V (SSTL12) |
| Temperature Grade | — | Industrial (I suffix) |
| Architecture | — | CMOS, 8n prefetch, bank groups |
| Termination | — | On-Die Termination (ODT) |
| DBI Support | — | Yes (Data Bus Inversion / DM) |
| Suhu Operasi | — | [DATA_NEEDED: Operating Temperature] |