H5AN4G8NBJR-VKC vs H5AN4G8NBJR-UHCR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-VKC disebabkan oleh SK hynix dan H5AN4G8NBJR-UHCR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-VKC | H5AN4G8NBJR-UHCR |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 4 Gb | — |
| Memory Organization | 512M x8 | — |
| Kadar Data | 2666 Mbps (DDR4-2666) | — |
| Memory Interface | Parallel | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Kemasan | FBGA-78 (7.5 x 11 mm) | 78-ball FBGA (11 mm x 7.5 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount (BGA solder-down) |
| Technology | CMOS DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency for 2666 grade] | [DATA_NEEDED: CL value for UH grade] |
| Refresh | [DATA_NEEDED: refresh rate] | [DATA_NEEDED: refresh rate 1x/2x specification] |
| Status RoHS | Compliant (Lead-Free & Halogen-Free per datasheet) | Compliant |
| Packaging | Tray | — |
| Status Lingkungan Hidup | Active | — |
| Density | — | 4 Gbit |
| Organisasi | — | 512M x 8 |
| Speed Grade | — | UH (DDR4-2400 class, PC2400) |
| Tegangan Pemberi Arus | — | 1.2 V (VDD) |
| Antaramuka | — | DDR4 SSTL12 |
| Internal Prefetch | — | 8n |
| Operating Case Temperature | — | -40C to +85C (industrial range) |
| Extended Temperature Range | — | Up to +95C case temperature (per datasheet conditions) |
| Lead Free | — | Yes |
| Boson Bebas | — | Yes |
| Packaging Suffix | — | -R = Tape and Reel |