H5AN4G8NBJR-VKC vs H5AN4G8NBJR-UHCR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN4G8NBJR-VKC sa pamamagitan ng SK hynix at H5AN4G8NBJR-UHCR sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN4G8NBJR-VKC | H5AN4G8NBJR-UHCR |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 4 Gb | — |
| Memory Organization | 512M x8 | — |
| Rate ng Data | 2666 Mbps (DDR4-2666) | — |
| Memory Interface | Parallel | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Packhaging | FBGA-78 (7.5 x 11 mm) | 78-ball FBGA (11 mm x 7.5 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA solder-down) |
| Technology | CMOS DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Latensya ng CAS | [DATA_NEEDED: CAS latency for 2666 grade] | [DATA_NEEDED: CL value for UH grade] |
| Refresh | [DATA_NEEDED: refresh rate] | [DATA_NEEDED: refresh rate 1x/2x specification] |
| Tindminan RoHS | Compliant (Lead-Free & Halogen-Free per datasheet) | Compliant |
| Packaging | Tray | — |
| Katayuan ng Lifecycle | Active | — |
| Density | — | 4 Gbit |
| Organisasyon | — | 512M x 8 |
| Speed Grade | — | UH (DDR4-2400 class, PC2400) |
| Volte ng Pagbibigay | — | 1.2 V (VDD) |
| Interface | — | DDR4 SSTL12 |
| Internal Prefetch | — | 8n |
| Operating Case Temperature | — | -40C to +85C (industrial range) |
| Extended Temperature Range | — | Up to +95C case temperature (per datasheet conditions) |
| Lead Free | — | Yes |
| Wala sa Halogen | — | Yes |
| Packaging Suffix | — | -R = Tape and Reel |