H5AN4G8NBJR-VKI vs H5AN4G8NBJR-VKC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-VKI disebabkan oleh SK hynix dan H5AN4G8NBJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-VKI | H5AN4G8NBJR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | — |
| Organisasi | 512M x 8 | — |
| Kadar Data | 2666 Mbps | 2666 Mbps (DDR4-2666) |
| Tegangan Pemberi Arus | 1.2 V | — |
| I/O Voltage | 1.2 V (SSTL12) | — |
| Kemasan | FBGA-78 | FBGA-78 (7.5 x 11 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Speed Grade | V (2666) | — |
| Temperature Grade | Industrial (I suffix) | — |
| Architecture | CMOS, 8n prefetch, bank groups | — |
| Termination | On-Die Termination (ODT) | — |
| DBI Support | Yes (Data Bus Inversion / DM) | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS latency for 2666 grade] |
| Suhu Operasi | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Refresh | [DATA_NEEDED: Refresh specification] | [DATA_NEEDED: refresh rate] |
| Status RoHS | [DATA_NEEDED: RoHS Status] | Compliant (Lead-Free & Halogen-Free per datasheet) |
| Saiz Ingatan | — | 4 Gb |
| Memory Organization | — | 512M x8 |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS DRAM |
| Volatile / Non-Volatile | — | Volatile |
| Packaging | — | Tray |
| Status Lingkungan Hidup | — | Active |