H5AN8G6NAFR-VKC vs H5AN8G6NAFR-PBC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NAFR-VKC disebabkan oleh SK hynix dan H5AN8G6NAFR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NAFR-VKC | H5AN8G6NAFR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organisasi | 512M x 16 | 512M x 16 |
| Core Supply Voltage | 1.2 V | — |
| Technology | CMOS | — |
| Kemasan | FBGA-96 (PBGA96) | TFBGA-96 (rectangular) |
| Speed Grade | -VKC (DDR4-2666 class, per SK Hynix part numbering) | — |
| Data Rate Class | Up to 2666 MT/s (per -VKC speed code) | — |
| Family | H5AN8G4NAFR / H5AN8G8NAFR / H5AN8G6NAFR | — |
| Jenis Pemasangan | Surface Mount (BGA) | Surface Mount |
| Status RoHS | Lead-Free & Halogen-Free, RoHS Compliant | Compliant (Lead-Free & Halogen-Free) |
| Application | Main memory (high density, high bandwidth) | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh | [DATA_NEEDED: refresh mode specification] | Auto / Self Refresh |
| Latensi CAS | [DATA_NEEDED: CAS latency for -VKC bin] | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| VDD Supply Voltage | — | 1.20 V +/- 0.06 V |
| VDDQ Supply Voltage | — | 1.20 V +/- 0.06 V |
| VPP Supply Voltage | — | 2.5 V +0.25/-0.125 V |
| Jenis Antaramuka | — | DDR4 (parallel, double data rate) |
| Speed Bins Supported | — | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) |
| DLL | — | DLL ON mode for speed bin operation |
| Clock | — | Differential clock (CK/CK#) |
| Number of Terminals | — | 96 |
| Composition | — | CMOS |