H5AN8G8NAFR-PBC vs K4A8G085WC-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NAFR-PBC disebabkan oleh SK hynix dan K4A8G085WC-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Bahagian terakhir untuk beliPengandingan Spesifikasi
| Parametr | H5AN8G8NAFR-PBC | K4A8G085WC-BCTD |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Masa Terakhir Dibeli |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kemasan | FBGA-78 | 78-ball FBGA (78FBGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Speed Grade / Data Rate | [DATA_NEEDED: speed grade / data rate] | — |
| Antaramuka | DDR4 (double data rate, synchronized to clock) | — |
| Address Inputs | A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) | — |
| Connectivity Test Mode | TEN (optional input on x4/x8, required on x16) | — |
| Process Technology | CMOS | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Datasheet Revision | Rev. 1.2 / July 2017 | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Kadar Data | — | 2666 Mbps (PC4-2133) |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V (1.14 V to 1.26 V) |
| Ball Pitch | — | 0.8 mm |
| Standard Operating Temp Range | — | 0C to +85C |
| Burst Length | — | 8 (chop 4) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| Jenis Antaramuka | — | Synchronous, parallel |