H5AN8G8NAFR-PBC vs K4A8G085WC-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NAFR-PBC sa pamamagitan ng SK hynix at K4A8G085WC-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Huling PagbiliPagsanggunian na paghahambing
| Parametro | H5AN8G8NAFR-PBC | K4A8G085WC-BCTD |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Huling Pagbili |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasyon | 1G x 8 | 1G x 8 |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | FBGA-78 | 78-ball FBGA (78FBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Speed Grade / Data Rate | [DATA_NEEDED: speed grade / data rate] | — |
| Interface | DDR4 (double data rate, synchronized to clock) | — |
| Address Inputs | A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) | — |
| Connectivity Test Mode | TEN (optional input on x4/x8, required on x16) | — |
| Process Technology | CMOS | — |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Datasheet Revision | Rev. 1.2 / July 2017 | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Rate ng Data | — | 2666 Mbps (PC4-2133) |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V (1.14 V to 1.26 V) |
| Ball Pitch | — | 0.8 mm |
| Standard Operating Temp Range | — | 0C to +85C |
| Burst Length | — | 8 (chop 4) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| Uri ng Interface | — | Synchronous, parallel |