H5AN8G8NAFR-UHI vs H5AN8G8NAFR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NAFR-UHI disebabkan oleh SK hynix dan H5AN8G8NAFR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NAFR-UHI | H5AN8G8NAFR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 8 Gb | — |
| Organisasi | 1G x 8 | 1G x 8 (x8) |
| Kadar Data | DDR4-2400 (PC2400), 1200 MHz clock | 2666 MT/s (per -R speed grade suffix) |
| Tegangan Pemberi Arus | 1.2 V | — |
| Antaramuka | DDR4 (JEDEC-class) | DDR4 (Double Data Rate 4) |
| Kemasan | 78-ball FBGA | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lead Free | Yes | — |
| Boson Bebas | Yes | — |
| Status RoHS | Compliant | Compliant |
| Technology | CMOS | — |
| Application | Main memory (high density, high bandwidth) | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature range] |
| Latensi CAS | [DATA_NEEDED: CAS latency for UHI speed grade] | [DATA_NEEDED: CAS Latency] |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 8 Gbit |
| Speed Grade | — | -RDC (DDR4-2666 class) |
| Core Supply Voltage (VDD) | — | 1.2 V |
| I/O Supply Voltage (VDDQ) | — | 1.2 V |
| Wordline Supply (VPP) | — | 2.5 V |
| Banks / Bank Groups | — | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | — | 8 (BL8) |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |