H5AN8G8NAFR-UHI vs H5AN8G8NAFR-RDC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NAFR-UHI sa pamamagitan ng SK hynix at H5AN8G8NAFR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G8NAFR-UHI | H5AN8G8NAFR-RDC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 8 Gb | — |
| Organisasyon | 1G x 8 | 1G x 8 (x8) |
| Rate ng Data | DDR4-2400 (PC2400), 1200 MHz clock | 2666 MT/s (per -R speed grade suffix) |
| Volte ng Pagbibigay | 1.2 V | — |
| Interface | DDR4 (JEDEC-class) | DDR4 (Double Data Rate 4) |
| Packhaging | 78-ball FBGA | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Lead Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Technology | CMOS | — |
| Application | Main memory (high density, high bandwidth) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature range] |
| Latensya ng CAS | [DATA_NEEDED: CAS latency for UHI speed grade] | [DATA_NEEDED: CAS Latency] |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 8 Gbit |
| Speed Grade | — | -RDC (DDR4-2666 class) |
| Core Supply Voltage (VDD) | — | 1.2 V |
| I/O Supply Voltage (VDDQ) | — | 1.2 V |
| Wordline Supply (VPP) | — | 2.5 V |
| Banks / Bank Groups | — | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | — | 8 (BL8) |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |