H5AN8G8NAFR-VKC vs H5AN8G8NAFR-PBC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NAFR-VKC disebabkan oleh SK hynix dan H5AN8G8NAFR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NAFR-VKC | H5AN8G8NAFR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Speed Grade | DDR4-2666 (VKC bin) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Antaramuka | SSTL12 | DDR4 (double data rate, synchronized to clock) |
| Burst Length | 8 (BL8) | — |
| Bank Group Architecture | Supported (per DDR4 JEDEC architecture) | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes (DLL for output skew control) | — |
| Kemasan | 78-ball FBGA | FBGA-78 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Status RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Process Technology | CMOS | CMOS |
| Recommended Application | Main memory requiring large density and high bandwidth | — |
| Tegangan Pemberi Arus | — | 1.2 V |
| Speed Grade / Data Rate | — | [DATA_NEEDED: speed grade / data rate] |
| Address Inputs | — | A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) |
| Connectivity Test Mode | — | TEN (optional input on x4/x8, required on x16) |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / July 2017 |