H5AN8G8NDJR vs H5AN8G6NCJR-VKC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NDJR disebabkan oleh SK hynix dan H5AN8G6NCJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NDJR | H5AN8G6NCJR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 1G x 8 | — |
| Kadar Data | 3200 MT/s | 2666 Mbps (MT/s) |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | 1.14 V to 1.26 V |
| VDDQ | 1.2 V | — |
| VPP | 2.5 V | — |
| Suhu Operasi | 0°C to +95°C (Tc) | 0C to +95C |
| Kemasan | FBGA-78 (7.5x11 mm) | FBGA-96 |
| Latensi CAS | 22 (typical) | — |
| tRCD | 22 ns | — |
| tRP | 22 ns | — |
| Burst Length | 8 and 4 (with burst chop) | — |
| Self-Refresh Current | 30 mA (typical) | — |
| Active Standby Current | 60 mA (typical) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Saiz Ingatan | — | 8 Gbit |
| Memory Organization | — | 512M x 16 |
| Clock Frequency | — | 1.333 GHz |
| Antaramuka | — | Parallel |
| Jenis Pemasangan | — | Surface Mount |
| Standby Current | — | 28 mA |
| Operating Current | — | 45 mA |
| Ciri-ciri | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration |
| Lead-Free / Halogen-Free | — | Yes (per datasheet description) |
| Status RoHS | — | Compliant |
| Status Lingkungan Hidup | — | Active |