H5ANAG4NBJR-UHC vs H5AN4G6NBJR-UHC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG4NBJR-UHC disebabkan oleh SK hynix dan H5AN4G6NBJR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5ANAG4NBJR-UHC | H5AN4G6NBJR-UHC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organisasi | 256M x16 | 256M x 16 |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (nominal 1.2 V) | 1.14 V to 1.26 V |
| Clock / Data Rate | 1.6 GHz | — |
| Kemasan | FBGA-96 (PBGA96) | FBGA-96 (PBGA-96) |
| Suhu Operasi | -40C to +95C | -40C to +95C |
| Antaramuka | CMOS, DDR4 (double data rate) | — |
| Data Mask (DM) | Yes | — |
| Asynchronous Reset | Yes | Yes (RESET_n) |
| On-Die Termination (ODT) | Dynamic ODT | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| CRC Function | Yes | Yes (command/address CRC) |
| Auto Self-Refresh | Yes | — |
| Jenis Pemasangan | Surface Mount (BGA) | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Latensi CAS | [DATA_NEEDED: CAS Latency / speed bin detail] | — |
| Saiz Ingatan | — | 4 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Technology | — | CMOS |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes (DM) |
| On-Die Termination | — | Dynamic ODT |