H5ANAG4NBJR-UHC vs H5AN4G6NBJR-UHC 对比

详细并排对比 H5ANAG4NBJR-UHC 出自 SK hynix 和 H5AN4G6NBJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG4NBJR-UHC H5ANAG4NBJR-UHC - 4Gb DDR4 SDRAM 1.6GHz FBGA-96 | SK hynix

H5ANAG4NBJR-UHC - 4Gb DDR4 SDRAM 1.6GHz FBGA-96 | SK hynix

H5ANAG4NBJR-UHC ✓ 量产中
SK hynix
H5AN4G6NBJR-UHC H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

H5AN4G6NBJR-UHC ✓ 量产中

规格对比

参数 H5ANAG4NBJR-UHC H5AN4G6NBJR-UHC
品牌 SK hynix SK hynix
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $8.09 $8.09
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit —
存储组织 256M x16 256M x 16
Supply Voltage (VDD) 1.14 V to 1.26 V (nominal 1.2 V) 1.14 V to 1.26 V
Clock / Data Rate 1.6 GHz —
封装 FBGA-96 (PBGA96) FBGA-96 (PBGA-96)
工作温度 -40C to +95C -40C to +95C
接口 CMOS, DDR4 (double data rate) —
Data Mask (DM) Yes —
Asynchronous Reset Yes Yes (RESET_n)
On-Die Termination (ODT) Dynamic ODT —
ZQ Calibration Yes Yes
Write Leveling Yes Yes
CRC Function Yes Yes (command/address CRC)
Auto Self-Refresh Yes —
安装类型 Surface Mount (BGA) Surface Mount
RoHS 状态 Compliant Compliant
CAS 延迟 [DATA_NEEDED: CAS Latency / speed bin detail] —
存储容量 — 4 Gbit
Clock Frequency — 1.6 GHz
Technology — CMOS
Self Refresh — Auto self-refresh
Data Mask Function — Yes (DM)
On-Die Termination — Dynamic ODT

数据手册与资源

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