H5ANAG4NBJR-UHC vs H5ANAG4NBJR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG4NBJR-UHC disebabkan oleh SK hynix dan H5ANAG4NBJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5ANAG4NBJR-UHC | H5ANAG4NBJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 16 Gb (2 GB) |
| Organisasi | 256M x16 | 4G x 4 |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| Clock / Data Rate | 1.6 GHz | — |
| Kemasan | FBGA-96 (PBGA96) | 78-ball FBGA |
| Suhu Operasi | -40C to +95C | — |
| Antaramuka | CMOS, DDR4 (double data rate) | SSTL-12 |
| Data Mask (DM) | Yes | — |
| Asynchronous Reset | Yes | — |
| On-Die Termination (ODT) | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Self-Refresh | Yes | — |
| Jenis Pemasangan | Surface Mount (BGA) | Surface Mount |
| Status RoHS | Compliant | Compliant (lead-free / halogen-free per RDC suffix) |
| Latensi CAS | [DATA_NEEDED: CAS Latency / speed bin detail] | — |
| Supply Voltage VDD | — | 1.2 V |
| Kadar Data | — | 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet]) |
| Prefetch | — | 16n (bank group architecture) |
| Ciri-ciri | — | Bank groups, CA parity, data CRC, ODT, DLL-off mode |
| Refresh | — | Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option] |
| Operating Temperature (case) | — | -40C to +85C (industrial; extended to 95C per datasheet conditions) |
| Temperature Grade Suffix | — | RDC - industrial temperature, lead-free, halogen-free |
| VDDQ | — | 1.2 V |
| Product Family | — | SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series |