H5ANAG4NBJR-VKC vs H5ANAG4NBJR-UHC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG4NBJR-VKC disebabkan oleh SK hynix dan H5ANAG4NBJR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5ANAG4NBJR-VKC H5ANAG4NBJR-VKC - 16Gb DDR4 SDRAM FBGA-78 | SK hynix

H5ANAG4NBJR-VKC - 16Gb DDR4 SDRAM FBGA-78 | SK hynix

H5ANAG4NBJR-VKC ✓ Aktif

Pengandingan Spesifikasi

Parametr H5ANAG4NBJR-VKC H5ANAG4NBJR-UHC
Merek SK hynix SK hynix
Kategori DRAM DRAM
Status Lingkungan Hidup Aktif Aktif
Product Type DDR4 SDRAM —
Density 16 Gb 4 Gbit
Kemasan FBGA-78 (7.5 mm x 11 mm) FBGA-96 (PBGA96)
Gambaran Suhu Operasi -40 C to +95 C (case, industrial with auto self-refresh) —
Speed Grade VKC (commercial speed bin - see SK hynix part number decoder) —
Kadar Data [DATA_NEEDED: data rate (MT/s) for -VKC bin] —
VDD Supply Voltage [DATA_NEEDED: VDD supply voltage] —
VDDQ Supply Voltage [DATA_NEEDED: VDDQ supply voltage] —
Data Mask Function Yes —
Asynchronous Reset Yes Yes
Dynamic ODT Yes —
ZQ Calibration Yes Yes
Write Leveling Yes Yes
CRC / CA Parity Yes —
Auto Self-Refresh Yes Yes
Jenis Pemasangan Surface Mount (BGA) Surface Mount (BGA)
Lead-Free [DATA_NEEDED: lead-free status] —
Boson Bebas [DATA_NEEDED: halogen-free status] —
Status RoHS Compliant (per distributor listing) Compliant
Jenis Ingatan — DDR4 SDRAM
Organisasi — 256M x16
Supply Voltage (VDD) — 1.14 V to 1.26 V (nominal 1.2 V)
Clock / Data Rate — 1.6 GHz
Suhu Operasi — -40C to +95C
Antaramuka — CMOS, DDR4 (double data rate)
Data Mask (DM) — Yes
On-Die Termination (ODT) — Dynamic ODT
CRC Function — Yes
Latensi CAS — [DATA_NEEDED: CAS Latency / speed bin detail]

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