H5ANAG6NBJR-PBC vs H5ANAG6NBJR-RDC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NBJR-PBC disebabkan oleh SK hynix dan H5ANAG6NBJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5ANAG6NBJR-PBC H5ANAG6NBJR-PBC - 16Gb DDR4 SDRAM DRAM Chip | SK hynix

H5ANAG6NBJR-PBC - 16Gb DDR4 SDRAM DRAM Chip | SK hynix

H5ANAG6NBJR-PBC ✓ Aktif
SK hynix
H5ANAG6NBJR-RDC H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC ✓ Aktif

Pengandingan Spesifikasi

Parametr H5ANAG6NBJR-PBC H5ANAG6NBJR-RDC
Merek SK hynix SK hynix
Kategori Memory ICs DRAM
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 16 Gb (2 GB) 16 Gb
Tegangan Pemberi Arus 1.2 V —
Generation Max Data Rate 3200 MT/s (family max) —
Kemasan FBGA-96 FBGA (Ball Grid Array), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Self Refresh Auto self-refresh —
Data Mask Function Yes —
Asynchronous Reset Yes —
On-Chip Termination Dynamic ODT —
ZQ Calibration Yes —
Write Leveling Yes —
CRC Function Yes —
Suhu Operasi [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: Operating Temperature Range]
Speed Bin (PBC) [DATA_NEEDED: Speed grade MT/s] —
Organisasi [DATA_NEEDED: Organization x16/x8] —
Status RoHS [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS Status]
Memory Organization — 16Gb x16
Kadar Data — 2666 Mbps (speed grade -RDC)
Supply Voltage (VDD) — 1.2 V
Antaramuka — Synchronous, double data rate
Clocking — Fully synchronous to both clock edges
Technology — CMOS
Standard — JEDEC DDR4 SDRAM
Application — Main memory
On-Die Termination (ODT) — Supported (DDR4 feature)
Bank Group Architecture — DDR4 bank groups (per JEDEC DDR4)

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