H5ANAG6NBJR-PBC vs H5ANAG6NBJR-RDC 比較

詳細並排比較 H5ANAG6NBJR-PBC 由 SK hynix 與 H5ANAG6NBJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5ANAG6NBJR-PBC H5ANAG6NBJR-PBC - 16Gb DDR4 SDRAM DRAM Chip | SK hynix

H5ANAG6NBJR-PBC - 16Gb DDR4 SDRAM DRAM Chip | SK hynix

H5ANAG6NBJR-PBC ✓ 啟用中
SK hynix
H5ANAG6NBJR-RDC H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC ✓ 啟用中

規格比較

參數 H5ANAG6NBJR-PBC H5ANAG6NBJR-RDC
品牌 SK hynix SK hynix
類別 Memory ICs DRAM
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gb (2 GB) 16 Gb
供應電壓 1.2 V —
Generation Max Data Rate 3200 MT/s (family max) —
封裝 FBGA-96 FBGA (Ball Grid Array), surface mount
安裝類型 Surface Mount Surface Mount
Self Refresh Auto self-refresh —
Data Mask Function Yes —
Asynchronous Reset Yes —
On-Chip Termination Dynamic ODT —
ZQ Calibration Yes —
Write Leveling Yes —
CRC Function Yes —
工作溫度 [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: Operating Temperature Range]
Speed Bin (PBC) [DATA_NEEDED: Speed grade MT/s] —
組織 [DATA_NEEDED: Organization x16/x8] —
RoHS 狀態 [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS Status]
Memory Organization — 16Gb x16
資料速率 — 2666 Mbps (speed grade -RDC)
Supply Voltage (VDD) — 1.2 V
介面 — Synchronous, double data rate
Clocking — Fully synchronous to both clock edges
Technology — CMOS
Standard — JEDEC DDR4 SDRAM
Application — Main memory
On-Die Termination (ODT) — Supported (DDR4 feature)
Bank Group Architecture — DDR4 bank groups (per JEDEC DDR4)

資料表與資源

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