H5ANAG6NBJR-UHC vs H5ANAG6NBJR-PBC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NBJR-UHC disebabkan oleh SK hynix dan H5ANAG6NBJR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5ANAG6NBJR-UHC H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC ✓ Aktif
SK hynix
H5ANAG6NBJR-PBC H5ANAG6NBJR-PBC - 16Gb DDR4 SDRAM DRAM Chip | SK hynix

H5ANAG6NBJR-PBC - 16Gb DDR4 SDRAM DRAM Chip | SK hynix

H5ANAG6NBJR-PBC ✓ Aktif

Pengandingan Spesifikasi

Parametr H5ANAG6NBJR-UHC H5ANAG6NBJR-PBC
Merek SK hynix SK hynix
Kategori DRAM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 4 Gb 16 Gb (2 GB)
Organisasi 256M x 16 [DATA_NEEDED: Organization x16/x8]
Antaramuka DDR4 (CMOS) —
Kemasan PBGA96 / FBGA-96 (TFBGA) FBGA-96
Package Dimensions 13 mm length (per JESD-30 R-PBGA-B96) —
Access Mode Multi Bank, Page Burst —
Suhu Operasi -40C to +95C [DATA_NEEDED: Operating Temperature]
Refresh Auto / Self Refresh —
Data Mask Supported (DM function) —
Asynchronous Reset Supported Yes
On-Chip Termination Dynamic ODT Dynamic ODT
ZQ Calibration Supported Yes
Write Leveling Supported Yes
CRC Supported —
Supply Voltage Class DDR4 (1.2 V class) —
Status RoHS RoHS Compliant [DATA_NEEDED: RoHS Status]
REACH Compliance Compliant —
ECCN EAR99 —
HTS Code 8542.32.00.36 —
Latensi CAS [DATA_NEEDED: CAS Latency] —
Max Data Rate [DATA_NEEDED: Max Data Rate] —
Tegangan Pemberi Arus — 1.2 V
Generation Max Data Rate — 3200 MT/s (family max)
Jenis Pemasangan — Surface Mount
Self Refresh — Auto self-refresh
Data Mask Function — Yes
CRC Function — Yes
Speed Bin (PBC) — [DATA_NEEDED: Speed grade MT/s]

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