H5ANAG6NCJR-XN vs MT40A1G16TD-062E Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NCJR-XN disebabkan oleh SK hynix dan MT40A1G16TD-062E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
MT40A1G16TD-062E MT40A1G16TD-062E - 16Gb DDR4-3200 x16 SDRAM FBGA | Micron

MT40A1G16TD-062E - 16Gb DDR4-3200 x16 SDRAM FBGA | Micron

MT40A1G16TD-062E ✓ Aktif

Pengandingan Spesifikasi

Parametr H5ANAG6NCJR-XN MT40A1G16TD-062E
Merek SK hynix Micron Technology
Kategori Memory ICs DRAM
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit (1G x 16) —
Organisasi 1G x 16 1G x 16
Kadar Data 3200 Mbps/pin (DDR4-3200) —
Supply Voltage (VDD) 1.14 V to 1.26 V —
Kemasan FBGA-96 (96-ball) 96-ball FBGA (7.5 x 13 mm)
Package Width 8 mm —
Jenis Pemasangan Surface Mount (BGA) Surface Mount
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask (DM) Yes —
Dynamic On-Chip Termination (ODT) Yes —
ZQ Calibration Yes —
CRC (Command/Address) Yes —
Write Leveling Yes —
Maximum Standby Current 0.074 A (per Vyrian listing) —
Status RoHS Compliant —
Suhu Operasi [DATA_NEEDED: operating temperature range] TC maximum up to 95 C
Latensi CAS [DATA_NEEDED: CAS latency for -XN speed grade] —
Saiz Ingatan — 16 Gbit
Clock Frequency — 1.6 GHz
Access Time — 19 ns
Antaramuka — POD12 (1.2V pseudo open-drain)
VDD Supply Voltage — 1.2 V +/- 60 mV
VDDQ Supply Voltage — 1.2 V +/- 60 mV
VPP Supply Voltage — 2.5 V, -125 mV, +250 mV
Bank Architecture — 8 banks (x16 configuration)
VREFDQ — On-die, internal, adjustable generation
Refresh — 8192-cycle, 64 ms up to 85C; 32 ms from 85C to 95C
Speed Grade — -062E
Product Line Suffix — AAT:F (automotive AEC grade available per Micron catalog)

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