H5ANAG6NCMR-XNI vs H5ANAG6NAMR-UHC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NCMR-XNI disebabkan oleh SK hynix dan H5ANAG6NAMR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5ANAG6NCMR-XNI H5ANAG6NCMR-XNI - DDR4 16Gb 3200Mbps DRAM | SK Hynix

H5ANAG6NCMR-XNI - DDR4 16Gb 3200Mbps DRAM | SK Hynix

H5ANAG6NCMR-XNI ✓ Aktif

Pengandingan Spesifikasi

Parametr H5ANAG6NCMR-XNI H5ANAG6NAMR-UHC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM (volatile DRAM) DDR4 SDRAM
Saiz Ingatan 16 Gb —
Memory Organization 1G x 16 —
Kadar Data 3200 Mbps (DDR4-3200, XN speed bin) —
Tegangan Pemberi Arus 1.2 V —
Technology CMOS Double Data Rate IV Synchronous DRAM —
Power Class Normal Power Normal Power
Kemasan FBGA-96 FBGA-96 (PBGA96)
Jenis Pemasangan Surface Mount Surface Mount (BGA solder ball)
Antaramuka Parallel (DDR4) —
Product Status Active —
Application Domain Main memory, industrial controllers, computing modules, consumer electronics —
Memory Format DRAM —
Speed Bin Family UH/VK/WM/XN —
Suhu Operasi [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: operating temperature range]
VPP Supply Voltage [DATA_NEEDED: VPP Supply Voltage] —
Aras MSL [DATA_NEEDED: MSL Level] —
Memory Density — 16 Gbit (2 GB)
Organisasi — 1G x 16
Speed Grade / Data Rate — DDR4-2400 (UHC bin, PC4-19200)
Supply Voltage (VDD) — 1.2 V
Architecture — CMOS DDR4 with bank groups
Refresh — Self-refresh and auto-refresh (DDR4 standard 64 ms)
Latensi CAS — [DATA_NEEDED: CL for UHC bin]
Jenis Antaramuka — Parallel, synchronous, double data rate
Available Speed Bins (family) — PB / RD / TF / UH / VK
Application Class — Main memory, embedded, industrial
Status RoHS — [DATA_NEEDED: RoHS status]
Status Lingkungan Hidup — Active production

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