H5ANAG6NCMR-XNI vs H5ANAG6NAMR-UHC 比較
詳細並排比較 H5ANAG6NCMR-XNI 由 SK hynix 與 H5ANAG6NAMR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5ANAG6NCMR-XNI | H5ANAG6NAMR-UHC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| 記憶體容量 | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| 資料速率 | 3200 Mbps (DDR4-3200, XN speed bin) | — |
| 供應電壓 | 1.2 V | — |
| Technology | CMOS Double Data Rate IV Synchronous DRAM | — |
| Power Class | Normal Power | Normal Power |
| 封裝 | FBGA-96 | FBGA-96 (PBGA96) |
| 安裝類型 | Surface Mount | Surface Mount (BGA solder ball) |
| 介面 | Parallel (DDR4) | — |
| Product Status | Active | — |
| Application Domain | Main memory, industrial controllers, computing modules, consumer electronics | — |
| Memory Format | DRAM | — |
| Speed Bin Family | UH/VK/WM/XN | — |
| 工作溫度 | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| VPP Supply Voltage | [DATA_NEEDED: VPP Supply Voltage] | — |
| MSL 等級 | [DATA_NEEDED: MSL Level] | — |
| Memory Density | — | 16 Gbit (2 GB) |
| 組織 | — | 1G x 16 |
| Speed Grade / Data Rate | — | DDR4-2400 (UHC bin, PC4-19200) |
| Supply Voltage (VDD) | — | 1.2 V |
| Architecture | — | CMOS DDR4 with bank groups |
| Refresh | — | Self-refresh and auto-refresh (DDR4 standard 64 ms) |
| CAS 延遲 | — | [DATA_NEEDED: CL for UHC bin] |
| 介面類型 | — | Parallel, synchronous, double data rate |
| Available Speed Bins (family) | — | PB / RD / TF / UH / VK |
| Application Class | — | Main memory, embedded, industrial |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS status] |
| 生命週期狀態 | — | Active production |