H5ANAG8NBJR-PBC vs H5AN8G8NCJR-PBC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG8NBJR-PBC disebabkan oleh SK hynix dan H5AN8G8NCJR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5AN8G8NCJR-PBC H5AN8G8NCJR-PBC - 8Gb DDR4 SDRAM, 1.2V | SK Hynix

H5AN8G8NCJR-PBC - 8Gb DDR4 SDRAM, 1.2V | SK Hynix

H5AN8G8NCJR-PBC ✓ Aktif

Pengandingan Spesifikasi

Parametr H5ANAG8NBJR-PBC H5AN8G8NCJR-PBC
Merek SK hynix SK hynix
Kategori DRAM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit (2 GB) —
Organisasi x8 1G x 8 (x8)
Supply Voltage (VDD) 1.2 V 1.2 V
Speed Grade / Data Rate PBC suffix, DDR4-2666 class —
Kemasan FBGA-78 (7.5 mm x 11 mm) 78-ball FBGA
Jenis Pemasangan Surface Mount Surface Mount
Bank Architecture 16 banks in 4 bank groups (DDR4 standard) —
Prefetch 8n —
Jenis Antaramuka Parallel, SSTL12 —
Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
CAS Latency (typical bin) [DATA_NEEDED: CAS latency] —
Refresh Self refresh, 1x/2x/4x refresh modes Auto-refresh and self-refresh
Die Revision BJR —
Status RoHS Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) Lead-Free & Halogen-Free
Aras MSL [DATA_NEEDED: moisture sensitivity level] —
Standard Package Quantity [DATA_NEEDED: standard quantity] —
Saiz Ingatan — 8 Gb (1 GB)
Interface Voltage (VDDQ) — 1.2 V (SSTL12)
Kadar Data — [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)]
Architecture — CMOS, fully synchronous, dual-edge clocked
Bank Structure — 8 internal banks, bank-group architecture
Burst Length — BL8
Ciri-ciri — ODT, DM, DQS strobes, programmable CAS latency, self-refresh
Die Revision Family — CJR (H5AN8G8NCJR-xxC)
Typical Applications — PC/server main memory, embedded solder-down memory

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga