H5ANAG8NBJR-PBC vs H5AN8G8NCJR-PBC 比較
詳細並排比較 H5ANAG8NBJR-PBC 由 SK hynix 與 H5AN8G8NCJR-PBC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5ANAG8NBJR-PBC | H5AN8G8NCJR-PBC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit (2 GB) | — |
| 組織 | x8 | 1G x 8 (x8) |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Speed Grade / Data Rate | PBC suffix, DDR4-2666 class | — |
| 封裝 | FBGA-78 (7.5 mm x 11 mm) | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Bank Architecture | 16 banks in 4 bank groups (DDR4 standard) | — |
| Prefetch | 8n | — |
| 介面類型 | Parallel, SSTL12 | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| CAS Latency (typical bin) | [DATA_NEEDED: CAS latency] | — |
| Refresh | Self refresh, 1x/2x/4x refresh modes | Auto-refresh and self-refresh |
| Die Revision | BJR | — |
| RoHS 狀態 | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) | Lead-Free & Halogen-Free |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Standard Package Quantity | [DATA_NEEDED: standard quantity] | — |
| 記憶體容量 | — | 8 Gb (1 GB) |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| 資料速率 | — | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| Burst Length | — | BL8 |
| 功能特色 | — | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |