H5ANAG8NBJR-VKC vs MT40A2G8AG-062E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG8NBJR-VKC disebabkan oleh SK hynix dan MT40A2G8AG-062E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5ANAG8NBJR-VKC | MT40A2G8AG-062E |
|---|---|---|
| Merek | SK hynix | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit |
| Organisasi | 2G x 8 | 2G x 8 |
| Speed Grade | DDR4-2666 (2666 Mbps/pin) | — |
| Tegangan Pemberi Arus | 1.14 V to 1.26 V (VDDQ) | — |
| Clock Frequency | 1.6 GHz (internal interface per distributor data) | 1600 MHz |
| Suhu Operasi | 0C to +85C | — |
| Kemasan | FBGA-78 | 78-FBGA (7.5 x 11 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Standby Current | 30 mA (operating, per distributor listing) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| Status RoHS | Compliant, Lead-Free and Halogen-Free | Compliant |
| Refresh Interval | [DATA_NEEDED: tREFI refresh interval] | — |
| Speed | — | DDR4-3200 (3200 MT/s) |
| Access Time (Clock Cycle Time) | — | 0.625 ns (tCK) |
| Latensi CAS | — | CL22 (DDR4-3200) |
| Access Time | — | 19 ns |
| Supply Voltage VDD | — | 1.2 V |
| I/O Interface | — | POD12 (1.2 V pseudo-open drain) |
| VPP Voltage | — | 2.5 V |
| Number of Banks | — | 16 (4 bank groups x 4 banks) |
| Operating Temperature (AUT grade) | — | -40C to +95C (per Micron grade table) |
| Die Revision | — | AG (current generation) |