H5TC4G63AFR-G7A vs H5TC4G63MFR-PBA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63AFR-G7A disebabkan oleh SK hynix dan H5TC4G63MFR-PBA disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5TC4G63AFR-G7A | H5TC4G63MFR-PBA |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35V | — |
| Kadar Data | 1600 Mbps (PC3-12800) | 1866 Mbps (PC3L-14900) |
| Kemasan | 96-ball FBGA | 96-ball FBGA |
| Suhu Operasi | 0°C to 95°C (case) | — |
| Latensi CAS | Programmable (e.g., 11) | — |
| Burst Length | 8 and 4 | BL8, BL4 (with burst chop) |
| Refresh Period | 7.8us at 85°C | — |
| On-Die Termination | Supported | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Process Technology | CMOS | 30nm-class |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |