H5TC4G63AFR-G7A vs H5TC4G63MFR-PBA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63AFR-G7A sa pamamagitan ng SK hynix at H5TC4G63MFR-PBA sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5TC4G63AFR-G7A | H5TC4G63MFR-PBA |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Volte ng Pagbibigay | 1.35V | — |
| Rate ng Data | 1600 Mbps (PC3-12800) | 1866 Mbps (PC3L-14900) |
| Packhaging | 96-ball FBGA | 96-ball FBGA |
| Temperature na Operasyon | 0°C to 95°C (case) | — |
| Latensya ng CAS | Programmable (e.g., 11) | — |
| Burst Length | 8 and 4 | BL8, BL4 (with burst chop) |
| Refresh Period | 7.8us at 85°C | — |
| On-Die Termination | Supported | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Process Technology | CMOS | 30nm-class |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |