H5TC4G63AFR-G7A vs H5TC4G63MFR-PBA 比較
詳細並排比較 H5TC4G63AFR-G7A 由 SK hynix 與 H5TC4G63MFR-PBA 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5TC4G63AFR-G7A | H5TC4G63MFR-PBA |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| 組織 | 256M x 16 | 256M x 16 |
| 供應電壓 | 1.35V | — |
| 資料速率 | 1600 Mbps (PC3-12800) | 1866 Mbps (PC3L-14900) |
| 封裝 | 96-ball FBGA | 96-ball FBGA |
| 工作溫度 | 0°C to 95°C (case) | — |
| CAS 延遲 | Programmable (e.g., 11) | — |
| Burst Length | 8 and 4 | BL8, BL4 (with burst chop) |
| Refresh Period | 7.8us at 85°C | — |
| On-Die Termination | Supported | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 無鹵素 | Yes | — |
| Process Technology | CMOS | 30nm-class |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |